The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Mar. 21, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Ofir Kanter, Haifa, IL;

Avi Steiner, Haifa, IL;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0679 (2013.01); G06F 3/061 (2013.01); G06F 3/0659 (2013.01); G06F 11/1068 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01);
Abstract

Disclosed herein are related to a system and a method for adjusting a read voltage threshold to read data from a plurality of memory dies of a nonvolatile memory device. Each of the plurality of memory dies comprises a plurality of blocks. A controller in communication with the plurality of memory dies may read, from a first block of the plurality of blocks, data corresponding to a read command received from a host. The controller may determine a bit error rate for the first block based on the data. The controller may update the read voltage threshold for the first block when the bit error rate for the first block exceeds a first error threshold. The read voltage threshold may be stored in the controller.


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