The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Sep. 28, 2020
Applicant:

Board of Trustees of Michigan State University, East Lansing, MI (US);

Inventors:

Richard R. Lunt, III, Williamston, MI (US);

Rebecca J. Anthony, Lansing, MI (US);

Alexander H. Ho, St. Johns, MI (US);

Rajib Mandal, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/62 (2006.01); C01B 21/06 (2006.01); H10K 30/35 (2023.01); H10K 50/115 (2023.01);
U.S. Cl.
CPC ...
C09K 11/62 (2013.01); C01B 21/0602 (2013.01); H10K 30/35 (2023.02); H10K 50/115 (2023.02);
Abstract

A method of making nanoparticles including a semiconducting nitride is provided. The method includes reacting precursors in a gas phase to form the nanoparticles including the semiconducting nitride. The precursors include at least one of a gallium (Ga) precursor or an indium (In) precursor and a nitrogen (N) precursor. The semiconducting nitride is InGaN, where 0≤x≤1. Structures that include the nanoparticles and systems for making the nanoparticles are also provided.


Find Patent Forward Citations

Lunt, III, Richard. (2025). Gallium indium nitride nanocrystals (U.S. Patent No. 12258505). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12258505

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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