The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Aug. 11, 2020
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Takahiro Kumakawa, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 35/02 (2006.01); B22F 1/054 (2022.01); B22F 7/06 (2006.01); B32B 15/04 (2006.01); B32B 15/16 (2006.01); H01L 23/00 (2006.01); B22F 1/10 (2022.01);
U.S. Cl.
CPC ...
B23K 35/025 (2013.01); B22F 1/054 (2022.01); B22F 7/064 (2013.01); B32B 15/04 (2013.01); B32B 15/16 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); B22F 1/10 (2022.01); B32B 2264/105 (2013.01); H01L 2224/29209 (2013.01); H01L 2224/29213 (2013.01); H01L 2224/29239 (2013.01); H01L 2224/29499 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83862 (2013.01);
Abstract

A joined structure includes: a first member; and a second member that faces the first member and that is joined to the first member via a joining layer. The joining layer includes a metal material and a solder material, apart of the metal material has at least one pore, and the solder material is located in a part of an internal area of the at least one pore. Also disclosed is a joining method that makes it possible to produce the joined structure. Further disclosed is a joining material used in the joining method. The joining method makes it possible to achieve non-pressurization sintering processes while maintaining high precise thickness of a joining layer between the first layer and the second layer based on the spacer.


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