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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12256651 B1

PDFFull Text
Date of Patent:
Mar. 18, 2025

Filed:

Oct. 21, 2020

With low density change, phase-change memory and preparation method therefor

Applicant:

Huazhong University of Science and Technology, Hubei, CN;

Inventors:

Xiaomin Cheng, Hubei, CN;

Jinlong Feng, Hubei, CN;

Ming Xu, Hubei, CN;

Meng Xu, Hubei, CN;

Xiangshui Miao, Hubei, CN;

Assignee:

HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei, CN;

Attorney:

JCIPRNET

Primary Examiner:

Sitaramarao S Yechuri

Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/10 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); H10B 63/10 (2023.02); H10N 70/023 (2023.02); H10N 70/841 (2023.02); H10N 70/8613 (2023.02); H10N 70/8828 (2023.02);
Abstract

A superlattice phase-change thin film with a low density change, a phase-change memory and a preparation method. The superlattice phase-change thin film includes first phase-change layers () and second phase-change layers () that are alternately stacked to form a periodic structure; during crystallization, the first phase-change layer () has a conventional positive density change, and the second phase-change layer () has an abnormal negative density change, therefore, the abnormal density reduction and volume increase of the second phase-change layer () during crystallization can be used to offset the volume reduction of the first phase-change layer () during crystallization.

Find Patent Forward Citations

Cheng, Xiaomin. (2025). With low density change, phase-change memory and preparation method therefor (U.S. Patent No. 12256651). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12256651

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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