The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Oct. 02, 2024
Applicant:

Artilux, Inc., Menlo Park, CA (US);

Inventors:

Yen-Cheng Lu, Hsinchu County, TW;

Yu-Hsuan Liu, Hsinchu County, TW;

Jung-Chin Chiang, Chiang, TW;

Yun-Chung Na, San Jose, CA (US);

Tsung-Ting Wu, Hsinchu County, TW;

Zheng-Shun Liu, Hsinchu County, TW;

Chou-Yun Hsu, Hsinchu County, TW;

Assignee:

Artilux, Inc., Menlo Park, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 39/00 (2025.01); H10F 77/14 (2025.01); H10F 77/30 (2025.01);
U.S. Cl.
CPC ...
H10F 77/334 (2025.01); H10F 30/2255 (2025.01); H10F 39/8033 (2025.01); H10F 77/14 (2025.01);
Abstract

An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material; an amplification region formed in the substrate and configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers; an interface-dopant region formed in the substrate between the absorption region and the amplification region; a buffer layer formed between the absorption region and the interface-dopant region; one or more field-control regions formed between the absorption region and the interface-dopant region and at least partially surrounding the buffer layer; and a buried-dopant region formed in the substrate and separated from the absorption region, where the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region.


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