The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Sep. 26, 2024
Halo Microelectronics Co., Ltd, Foshan, CN;
Lijie Zhao, Foshan, CN;
Suming Lai, San Diego, CA (US);
Halo Microelectronics Co., Ltd, Foshan, CN;
Abstract
The present disclosure provides a transistor, a method for configuring the same, an electrostatic discharge (ESD) protection circuit, and an electronic device for ESD protection. The transistor comprises a P-type well, a body terminal region, a source region, and a metal silicide layer. The body terminal region and the source region are disposed within the P-type well. The body terminal region is adjacent to the source region. The metal silicide layer is disposed on surfaces of the body terminal region and the source region, and electrically connected to the body terminal region and the source region separately. A metal and contact structures are provided on the metal silicide layer to adjust the resistance between the emitter of the parasitic bipolar transistor of the transistor and the body terminal region or between the base of the parasitic bipolar transistor and the source region, for ESD protection.