The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Mar. 18, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Hung-Chi Tsai, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/04 (2023.01); H10B 20/20 (2023.01);
U.S. Cl.
CPC ...
H10B 20/20 (2023.02);
Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a channel region positioned in the substrate, first impurity regions positioned in the substrate and respectively positioned on two ends of the channel region, a gate dielectric layer positioned on the channel region, a gate bottom conductive layer positioned on the gate dielectric layer, composite contacts respectively positioned on the first impurity regions, programmable insulating layers respectively positioned on the composite contacts, a top conductive layer positioned on the programmable insulating layers and electrically coupled to the gate bottom conductive layer. One of the plurality of composite contacts includes a protection liner having a U-shaped profile and a metal core in the protection liner.


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