The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Jun. 03, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Shin Kitano, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/78 (2023.01); H01L 27/146 (2006.01); H04N 25/47 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01);
U.S. Cl.
CPC ...
H04N 25/78 (2023.01); H04N 25/47 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01); H01L 27/14634 (2013.01);
Abstract

Provided is an imaging apparatus that includes a photoelectric converter that generates a charge according to a received light amount, and a charge transfer region that is disposed at a place inside a substrate not exposed to a substrate surface and in contact with the photoelectric converter, and to which the charge generated by the photoelectric converter is transferred. The imaging apparatus further includes a charge accumulation region that is disposed apart from the charge transfer region in a substrate surface direction and accumulates the charge transferred from the charge transfer region, a transistor that performs control to transfer the charge from the charge transfer region to the charge accumulation region, and a detector that outputs a detection signal indicating whether or not an absolute value of a change amount of an electrical signal according to an amount of the charge transferred by the transistor exceeds a predetermined threshold value.


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