The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Dec. 23, 2021
Applicant:
Huawei Technologies Co., Ltd., Shenzhen, CN;
Inventors:
Assignee:
Huawei Technologies Co., Ltd., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2021.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1014 (2013.01); H01S 5/2081 (2013.01); H01S 5/22 (2013.01); H01S 5/2205 (2013.01); H01S 5/3409 (2013.01); H01S 5/343 (2013.01); H01S 5/2086 (2013.01); H01S 5/3213 (2013.01); H01S 2301/18 (2013.01);
Abstract
A semiconductor laser comprises: a substrate; a first cladding layer disposed above the substrate; a second cladding layer disposed above the first cladding layer so that the first cladding layer is positioned between the substrate and the second cladding layer; and a first mode expansion layer within the first cladding layer, a second mode expansion layer within the second cladding layer, or both the first mode expansion layer within the first cladding layer and the second mode expansion layer within the second cladding.