The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Mar. 09, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Takahiro Ogata, Himeji Hyogo, JP;
Teruyuki Ohashi, Kawasaki Kanagawa, JP;
Hiroshi Kono, Himeji Hyogo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device of embodiments includes: an element region including a transistor and a first diode; a termination region surrounding the element region and including a second diode; and an intermediate region between the element region and the termination region. The element region includes a first electrode, a second electrode, a gate electrode, a silicon carbide layer, and a gate insulating layer. The termination region includes a first wiring layer electrically connected to the first electrode, the second electrode, and the silicon carbide layer. The intermediate region includes a gate electrode pad, a first connection layer electrically connecting the first electrode and a part of the first wiring layer, a second connection layer electrically connecting the first electrode and another part of the first wiring layer, a second wiring layer electrically connected to the gate electrode pad and the gate electrode, and the silicon carbide layer.