The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Mar. 08, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Shoko Hanagata, Komatsu Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a first electrode; a first semiconductor layer on the first electrode in a diode region; a second semiconductor layer on the first electrode in an IGBT region; a semiconductor layer on the first and second semiconductor layers, a first upper layer of the semiconductor layer in the diode region including a first region adjacent to the IGBT region and a second region separated from the IGBT region, an impurity concentration being less in the first region than in the second region; a third semiconductor layer on the semiconductor layer; a fourth semiconductor layer of the third semiconductor layer in the IGBT region; a third electrode extending in a direction from the fourth semiconductor layer toward the semiconductor layer; and an insulating film between the second electrode and each of the third semiconductor layer, the semiconductor layer, and the third electrode.