The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Jan. 11, 2019
Applicant:
South China Normal University, Guangzhou Guangdong, CN;
Inventors:
Richard Notzel, Guangzhou Guangdong, CN;
Peng Wang, Guangzhou Guangdong, CN;
Stefano Sanguinetti, Milan, IT;
Guofu Zhou, Guangzhou Guangdong, CN;
Assignee:
South China Normal University, Guangdong, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); B82Y 40/00 (2011.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); H01L 21/02381 (2013.01); H01L 21/0254 (2013.01); H01L 21/02603 (2013.01); H01L 29/2003 (2013.01); B82Y 40/00 (2013.01); H01L 21/02378 (2013.01); H01L 21/02389 (2013.01); H01L 21/02395 (2013.01); H01L 21/0242 (2013.01);
Abstract
Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (). Further provided are methods for preparing the nanowire array and the optoelectronic device.