The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Oct. 26, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Akihiro Tobioka, Nagoya, JP;

Yusuke Tanaka, Brussels, BE;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 23/00 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

An alternating stack of insulating layers and spacer material layers is formed over a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory openings and support openings are formed through the alternating stack. The memory openings are arranged in a first hexagonal array having a nearest-neighbor direction that is parallel to a first horizontal direction, and the support openings are arranged in a second hexagonal array having a nearest-neighbor direction that is perpendicular to the first horizontal direction. Memory opening fill structures are formed within a respective one of the memory openings, and support pillar structures within a respective one of the support openings.


Find Patent Forward Citations

Loading…