The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

May. 07, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jun Hyuk Lim, Hwaseong-si, KR;

Jong Min Baek, Seoul, KR;

Deok Young Jung, Seoul, KR;

Sung Jin Kang, Seoul, KR;

Jang Ho Lee, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); H01L 21/76816 (2013.01); H01L 21/76841 (2013.01); H01L 21/76877 (2013.01); H01L 21/823468 (2013.01); H01L 23/5226 (2013.01);
Abstract

There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.


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