The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Jan. 20, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Minwoo Choi, Suwon-si, KR;

Young Jae Kang, Suwon-si, KR;

Bonwon Koo, Suwon-si, KR;

Yongyoung Park, Suwon-si, KR;

Hajun Sung, Suwon-si, KR;

Dongho Ahn, Suwon-si, KR;

Kiyeon Yang, Suwon-si, KR;

Wooyoung Yang, Suwon-si, KR;

Changseung Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H10B 63/10 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); H10B 63/10 (2023.02); G11C 2213/30 (2013.01); H10B 63/84 (2023.02);
Abstract

A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.


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