The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Dec. 09, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chih-Jen Chen, Kaohsiung, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/406 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40615 (2013.01); G11C 11/40618 (2013.01); G11C 11/4074 (2013.01);
Abstract
The memory device of the disclosure includes a fuse voltage generator, a fuse storage and a logic circuit. The fuse voltage generator generates a fuse voltage in response to an enable signal having a first logic level, and stop generating the fuse voltage in response to the enable signal having a second logic level. The fuse storage storages a setting data of the memory device. The fuse storage outputs the setting data in response to the fuse voltage. The logic circuit generates the enable signal in response to at least two operating signals.