The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Apr. 24, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Manuel Le Gallo-Bourdeau, Horgen, CH;

Athanasios Vasilopoulos, Zurich, CH;

Benedikt Kersting, Zurich, CH;

Julian Röttger Büchel, Zurich, CH;

Abu Sebastian, Adliswil, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G06F 3/06 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0679 (2013.01); G11C 11/56 (2013.01);
Abstract

The invention is notably directed to a method of programming memory elements of an in-memory computing (IMC) device. The IMC applies a SET signal to the K memory elements of said each cell to set each of the K memory elements to a SET state and reading K conductance values of the K memory elements in the SET state. The IMC adjusts, based on the K conductance values read and the target conductance value, a conductance value of at least one of the K memory elements to match a summed conductance of the K memory elements of said each cell with the target conductance value. The IMC maximizes a number of the K memory elements that are either in their SET state or in a RESET state of zero conductance nominal value, such that at most one of the K memory elements is neither in a SET state nor in a RESET state.


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