The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Dec. 24, 2018
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Guy Feuillet, Saint-Martin d'Uriage, FR;
Blandine Alloing, Valbonne, FR;
Virginie Brandli, Valbonne, FR;
Benoit Mathieu, Grenoble, FR;
Jesus Zuniga Perez, Biot, FR;
Abstract
A process for obtaining a nitride (N) layer preferably obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), may include: on a stack including a substrate and at least the following layers successively disposed from the substrate: a creep layer having a glass transition temperature, T, and a crystalline layer, forming pads by etching the stack so that each pad includes at least a creep segment formed by at least a portion of the creep layer, and a crystalline segment formed by the crystalline layer; and growing by epitaxy a crystallite on each of the pads and continuing the epitaxial growth of the crystallites so as to form the nitride layer. The epitaxial growth may be carried out at a temperature T, such that T≥k1×T, with k1 being 0.8.