The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Jul. 03, 2023
Applicant:
United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);
Inventors:
Assignee:
United States of America as represented by the Administrator of NASA, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/58 (2006.01); C23C 14/14 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/5826 (2013.01); C23C 14/14 (2013.01); C23C 14/34 (2013.01);
Abstract
Methods and systems that enable growing a SiGe film at relative high temperature resulting in single crystalline properties and imparting twin crystal structures and/or dislocation to the SiGe film through either in-situ or ex-situ electron-beam irradiation. The various embodiments may maintain (or increase) the Seeback coefficient and electrical conductivity of thermoelectric materials and simultaneously decrease the thermal conductivity of the thermoelectric materials.