The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Jan. 18, 2023
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Motoki Takabe, Shiojiri, JP;

Yu Shiozawa, Shiojiri, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/14 (2006.01); B41J 2/16 (2006.01); B81B 7/02 (2006.01);
U.S. Cl.
CPC ...
B41J 2/14233 (2013.01); B41J 2/1606 (2013.01); B41J 2002/14306 (2013.01); B41J 2002/14362 (2013.01); B41J 2002/14419 (2013.01); B41J 2002/14475 (2013.01); B41J 2002/14491 (2013.01); B41J 2/162 (2013.01); B41J 2/1623 (2013.01); B41J 2/1628 (2013.01); B41J 2/1629 (2013.01); B41J 2/164 (2013.01); B41J 2202/08 (2013.01); B81B 7/02 (2013.01); B81B 2201/052 (2013.01);
Abstract

A MEMS device includes a first substrateincluding a single-crystal silicon substrate and a second substrateincluding a single-crystal silicon substrate, in which the first substrateand the second substrateare laminated together, and the first substrateand the second substrateare joined to each other such that the cleavage directions of both substrates intersect each other.


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