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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12250885 B1

PDFFull Text
Date of Patent:
Mar. 11, 2025

Filed:

Sep. 11, 2020

Thermoelectric conversion element, method for manufacturing the same, and thermoelectric conversion device

Applicants:

Mitsuba Corporation, Kiryu, JP;

National Institute for Materials Science, Ibaraki, JP;

Inventors:

Satoki Tada, Kiryu, JP;

Yukihiro Isoda, Tsukuba, JP;

Assignees:

Mitsuba Corporation, Gunma, JP;

National Institute for Materials Science, Ibaraki, JP;

Attorney:

Wood Herron & Evans LLP

Primary Examiner:

Tae-Sik Kang

Int. Cl.
CPC ...
H10N 10/853 (2023.01); C22C 21/02 (2006.01); C22C 21/08 (2006.01); H10N 10/01 (2023.01); H10N 10/17 (2023.01); H10N 10/817 (2023.01); H10N 10/851 (2023.01);
U.S. Cl.
CPC ...
H10N 10/853 (2023.02); C22C 21/02 (2013.01); C22C 21/08 (2013.01); H10N 10/01 (2023.02); H10N 10/17 (2023.02); H10N 10/817 (2023.02); H10N 10/8556 (2023.02);
Abstract

A thermoelectric conversion element () of the present invention includes a first electrode () which has one side joined to a first surface () of an n-type semiconductor via an n-side junction layer (), and the other side joined to a first surface () of a p-type semiconductor via a p-side junction layer (), and a second electrode () which is joined to each of a second surface () of the n-type semiconductor and a second surface () of the p-type semiconductor via the n-side junction layer () and the p-side junction layer (). Each of the n-type semiconductor () and the p-type semiconductor () has a composition represented by Formulas (1) and (2) below, and the n-side junction layer () and the p-side junction layer () include Al.MgSiSn+A  (1)MgSiSnGe+B  (2).

Find Patent Forward Citations

Tada, Satoki. (2025). Thermoelectric conversion element, method for manufacturing the same, and thermoelectric conversion device (U.S. Patent No. 12250885). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12250885

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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