The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Dec. 27, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Yu-Ping Chen, New Taipei, TW;
Chun-Shun Huang, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H01L 21/3115 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H10D 64/01 (2025.01); H01L 21/31155 (2013.01); H01L 21/32053 (2013.01); H10D 64/015 (2025.01); H10D 64/021 (2025.01);
Abstract
A method for manufacturing semiconductor device structure includes providing a substrate having a surface; forming a first gate structure on the surface; forming a second gate structure on the surface; forming a first well region in the substrate and between the first gate structure and the second gate structure; forming a conductive contact within a trench between the first gate structure and the second gate structure; forming a first structure in the first well region, wherein the first structure tapers away from a bottom portion of the conductive contact.