The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Aug. 07, 2023
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Yu Nakane, Kawasaki Kanagawa, JP;

Nobuyuki Toda, Kawasaki Kanagawa, JP;

Hiroyoshi Kitahara, Yokohama Kanagawa, JP;

Takeshi Yamamoto, Kawasaki Kanagawa, JP;

Naozumi Terada, Kawasaki Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/30 (2023.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 43/30 (2023.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01); H10B 43/30 (2023.02);
Abstract

According to the present embodiment, a semiconductor device includes a semiconductor substrate, a memory transistor, and a MOS transistor. The memory transistor includes at least a first silicon dioxide film and a first gate electrode positioned on the semiconductor substrate in order. The MOS transistor includes a second silicon dioxide film and a second gate electrode positioned on the semiconductor substrate in order. Any bird's beak is not generated in at least either the first silicon dioxide film or the first gate electrode of the memory transistor.


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