The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Sep. 01, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H10B 41/35 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 29/40114 (2019.08); H01L 29/42324 (2013.01); H10B 41/35 (2023.02);
Abstract
A semiconductor device may include: a gate structure including insulating layers and control gates, which are alternately stacked; a channel layer penetrating the gate structure; floating gates respectively located between the control gates and the channel layer; first blocking patterns respectively located between the control gates and the floating gates; and a second blocking pattern located between the first blocking patterns and the control gates and between the control gates and the insulating layers, the second blocking pattern including a material with a dielectric constant that is higher than that of the first blocking patterns.