The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Oct. 28, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jung Kyu Jang, Hwaseong-si, KR;
Suk-Soo Pyo, Hwaseong-si, KR;
Abstract
A power switch circuit and non-volatile memory device including the same are provided. The power switch circuit includes a multi-voltage providing circuit configured to receive a first voltage and a second voltage greater than the first voltage, output a third voltage corresponding to the first voltage to a first output terminal, and output a fourth voltage corresponding to the second voltage to a second output terminal. The power switch circuit also includes a leakage current prevention circuit configured to cut off a leakage current flowing through the multi-voltage providing circuit. The multi-voltage providing circuit includes a first inverter which is driven using the second voltage. The leakage current prevention circuit is configured to cut off the leakage current flowing through the first inverter in response to both the first voltage and the second voltage being provided to the multi-voltage providing circuit.