The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Jun. 21, 2022
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Marco Cassia, San Diego, CA (US);

Jose Cabanillas, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/52 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 1/52 (2013.01); H03F 1/56 (2013.01); H03F 3/195 (2013.01); H04B 1/0458 (2013.01); H03F 2200/451 (2013.01); H03F 2200/471 (2013.01); H04B 2001/0408 (2013.01);
Abstract

Methods and apparatus for providing amplifier protection for a radio frequency (RF) front-end circuit. An example RF front-end circuit generally includes an amplifier with a gain, a first sensor configured to sense a first power (or voltage) of a first node coupled to an input of the amplifier, a second sensor configured to sense a second power (or voltage) of a second node coupled to an output of the amplifier, and logic coupled to the first and second sensors. The logic is generally configured to determine that the second power (or voltage) is outside a range based on the gain and the first power (or voltage) and to take an action to protect the amplifier based on the determination. By utilizing the techniques and apparatus described herein, protection can be provided to the amplifier(s) in an RF front-end circuit without significantly impacting the performance of the RF front-end circuit.


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