The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Jan. 24, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhee Choi, Seongnam-si, KR;

Nakhyun Kim, Yongin-si, KR;

Joosung Kim, Seongnam-si, KR;

Eunsung Lee, Seoul, KR;

Joohun Han, Hwaseong-si, KR;

Kiho Kong, Suwon-si, KR;

Junghun Park, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/44 (2013.01); H01L 25/0753 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 2933/0025 (2013.01);
Abstract

Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.


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