The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Nov. 08, 2021
Wuhan Tianma Micro-electronics Co., Ltd., Wuhan, CN;
Kazushige Takechi, Kanagawa, JP;
Wuhan Tianma Micro-Electronics Co., Ltd., Wuhnan, CN;
Abstract
In an oxide semiconductor thin-film transistor, an oxide semiconductor part includes a channel region and a first and a second source/drain regions sandwiching the channel region. An insulator part made of a metal compound having a relative permittivity of not less than 8 is located between a gate electrode part and the oxide semiconductor part. A first compound interfacial part contains constituent elements of the oxide semiconductor part and constituent elements of the insulator part, and has an interface with a first source/drain electrode part and another interface with the first source/drain region. A second compound interfacial part contains constituent elements of the oxide semiconductor part and constituent elements of the insulator part, and has an interface with a second source/drain electrode part and another interface with the second source/drain region.