The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Mar. 28, 2022
Applicant:

Socionext Inc., Kanagawa, JP;

Inventor:

Junji Iwahori, Yokohama, JP;

Assignee:

SOCIONEXT INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/78696 (2013.01);
Abstract

In a p-type region, a nanosheet farthest from an n-type region has a face exposed from a first gate interconnect on the side away from the n-type region in the Y direction. In the n-type region, a nanosheet farthest from the p-type region has a face exposed from a second gate interconnect on the side away from the p-type region in the Y direction. In the p-type region, a nanosheet closest to the n-type region has a face exposed from the first gate interconnect on the side closer to the n-type region in the Y direction. In the n-type region, a nanosheet closest to the p-type region has a face exposed from the second gate interconnect on the side closer to the p-type region in the Y direction.


Find Patent Forward Citations

Loading…