The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Aug. 16, 2022
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Hiroshi Yoshida, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A high-voltage MOS transistor includes a semiconductor substrate, a plurality of active regions, a gate insulation layer, and a gate electrode. The active regions are defined by an isolation structure, wherein the active regions include a channel portion and two side portions, the channel portion has first opposite sides and second opposite sides, and the two side portions are at the first opposite sides of the channel portion. The gate insulation layer is disposed on a surface of the channel portion. The gate electrode is disposed on the gate insulation layer and extending on a portion of the isolation structure, wherein the gate electrode includes a pair of channel edge openings and a plurality of slits. The pair of channel edge openings are at the second opposite sides of the channel portion to expose a portion of the gate insulation layer, and the slits are disposed over the channel portion.