The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Feb. 09, 2022
Applicant:
Will Semiconductor (Shanghai) Co. Ltd., Shanghai, CN;
Inventors:
Nobuyuki Shirai, Yokohama, JP;
Nobuyoshi Matsuura, Yokohama, JP;
Assignee:
WILL SEMICONDUCTOR (SHANGHAI) CO. LTD., Shanghai, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract
A problem to be solved is to reduce a leakage current between the gate and the source. Provided is a trench type FFT, where a thickness Δ1 of an oxide insulating layer O1 that is closer to the inner side than a line extending upward from the outer peripheral side of a nitride insulating layer N is ½ of a thickness d of the nitride insulating layer N or more; and a thickness Δ2 of an oxide insulating layer O3 between the upper end of the nitride insulating layer N and a gate region is ½ of the thickness d of the nitride insulating layer N or more.