The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Jun. 05, 2023
Applicants:
Kyoto University, Kyoto, JP;
Nichia Corporation, Anan, JP;
Inventors:
Katsuhiro Kishimoto, Kyoto, JP;
Mitsuru Funato, Kyoto, JP;
Yoichi Kawakami, Kyoto, JP;
Kunimichi Omae, Anan, JP;
Assignees:
KYOTO UNIVERSITY, Kyoto, JP;
NICHIA CORPORATION, Anan, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 29/78 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01);
Abstract
A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.