The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Mar. 29, 2022
Applicants:
Hyundai Motor Company, Seoul, KR;
Kia Corporation, Seoul, KR;
Inventors:
Assignees:
HYUNDAI MOTOR COMPANY, Seoul, KR;
KIA CORPORATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 21/823412 (2013.01); H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract
A power semiconductor device includes: a semiconductor layer; a well region positioned inside the semiconductor layer and having a first conductive type; a source region positioned on the well region and having a second conductive type; a gate region making contact with a side surface of the well region to surround the well region; and a drift region making contact with bottom surfaces of the well region and the gate region and having the second conductive type. The drift region may include a protrusion region extending from the drift region and making contact with another side surface of the well region.