The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Jul. 14, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Younggu Jin, Osan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/148 (2006.01); H04N 25/705 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14627 (2013.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/1462 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14831 (2013.01); H04N 25/705 (2023.01);
Abstract

A depth pixel includes a first photodiode, a second photodiode and a common microlens. First and second taps are disposed at both sides of the first photodiode in a first horizontal direction to sample a photo charge stored in the first photodiode. The second photodiode is disposed at a side of the first photodiode in a second horizontal direction perpendicular to the first horizontal direction. Third and fourth taps are disposed at both sides of the second photodiode in the first horizontal direction to sample a photo charge stored in the second photodiode. The common microlens is disposed above or below the semiconductor substrate. The common microlens covers both of the first photodiode and the second photodiode to focus an incident light to the first photodiode and the second photodiode.


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