The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Jun. 26, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jubin Seo, Seongnam-si, KR;

Kwangjin Moon, Hwaseong-si, KR;

Kunsang Park, Hwaseong-si, KR;

Myungjoo Park, Pohang-si, KR;

Sujeong Park, Hwaseong-si, KR;

Jaewon Hwang, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01); H01L 23/53209 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 23/49827 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/73251 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06548 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first surface and a second surface, which are opposite to each other, an active pattern protruding from the first surface of the semiconductor substrate, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, a power delivery network disposed on the second surface of the semiconductor substrate, and a penetration via structure penetrating the semiconductor substrate and electrically connected to the power rail and the power delivery network. The penetration via structure includes a first conductive pattern electrically connected to the power rail and a second conductive pattern electrically connected to the power delivery network. The first conductive pattern includes a material different from the second conductive pattern.


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