The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Jun. 21, 2024
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Jar-Ming Ho, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/544 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/28506 (2013.01); H01L 21/3213 (2013.01); H01L 21/7682 (2013.01); H01L 23/5329 (2013.01); H01L 23/544 (2013.01); H10B 12/00 (2023.02); H10B 12/09 (2023.02); H10B 12/50 (2023.02);
Abstract

The present disclosure provides a semiconductor structure, which includes: a first conductive layer arranged over a substrate; a dielectric layer arranged over the first conductive layer; a plurality of first conductive plugs penetrating through the dielectric layer; a plurality of spacers surrounding the respective first conductive plugs; a lining layer covering the dielectric layer, the spacer and the first conductive plugs, wherein the lining layer and the first conductive plugs include manganese (Mn); a second conductive plug penetrating through the lining layer; and a second conductive layer over the lining layer and the second conductive plug.


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