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H01L 21/02 (2006.01); B82Y 10/00 (2011.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);

U.S. Cl.

CPC ...

H01L 21/02293 (2013.01); H01L 21/28518 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 23/485 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/41766 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66553 (2013.01); H01L 29/6656 (2013.01); H01L 29/775 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01);

Abstract

A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.

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