The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Dec. 27, 2021
Universite DE Limoges, Limoges, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Airmems, Limoges, FR;
Romain Stefanini, Limoges, FR;
Ling Yan Zhang, Cognac-la-Foret, FR;
Pierre Blondy, Limoges, FR;
Fabien Roubeau, Limoges, FR;
Kevin Nadaud, Limoges, FR;
UNIVERSITE DE LIMOGES, Limoges, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
AIRMEMS, Limoges, FR;
Abstract
A radio frequency micro-electromechanical switch (RF MEMS switch) is described. Also described is a method of producing such an RF MEMS switch. The method can include depositing on a substrate a first sacrificial layer and producing a pattern. A first layer of metal is deposited on the first sacrificial layer and on the substrate. A pattern is produced to form a first RF line and a first MEMS membrane. A second sacrificial layer is deposited on the first RF line and a pattern is produced. A dielectric layer is deposited on the second sacrificial layer and then a pattern is produced to form a dome. The first and second sacrificial layers are removed through a dome opening. A second metal layer is deposited on the dome and on the substrate, and then a pattern is produced to plug the dome opening(s) and to form a second RF line.