The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Dec. 29, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Joohee Son, Hwaseong-si, KR;

Hune Seo, Goyang-si, KR;

Dongcheul Chang, Seongnam-si, KR;

Wandong Kim, Siheung-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 16/20 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/102 (2013.01); G11C 16/20 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01); G11C 16/3459 (2013.01);
Abstract

An operating method of a non-volatile memory device, the method including: receiving a program command from an external device; determining an operating mode in response to the program command; when the operating mode is a surface mount technology (SMT) mode, performing an initial program operation in which a plurality of memory cells are programmed through a plurality of steps to form a first threshold voltage distribution; and when the operating mode is a normal mode, performing a normal program operation in which the plurality of memory cells are programmed through a single step to form a second threshold voltage distribution, wherein the first threshold voltage distribution is narrower in width than the second threshold voltage distribution.


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