The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Oct. 24, 2022
Applicant:

King Fahd University of Petroleum and Minerals, Dhahran, SA;

Inventors:

Amar Kamal Mohmeadkhair Salih, Dhahran, SA;

Qasem Ahmed Qasem Drmosh, Dhahran, SA;

Tarek Kandiel, Dhahran, SA;

Zain Hassan Yamani, Dhahran, SA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/08 (2006.01); C23C 18/12 (2006.01); C23C 28/00 (2006.01); C25B 1/04 (2021.01); C25B 1/55 (2021.01); C25B 11/091 (2021.01); C25D 3/56 (2006.01); C25D 5/00 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0036 (2013.01); C23C 14/083 (2013.01); C23C 14/086 (2013.01); C23C 18/1208 (2013.01); C23C 18/1295 (2013.01); C23C 28/345 (2013.01); C25B 1/04 (2013.01); C25B 1/55 (2021.01); C25B 11/091 (2021.01); C25D 3/562 (2013.01); C25D 5/011 (2020.08);
Abstract

A method for coating a substrate with a Co-Pi modified BiVO/WOheterostructure film includes direct current reactive sputtering tungsten (W) onto a substrate in a gaseous mixture containing oxygen to form a tungsten trioxide (WO) film, direct current reactive sputtering bismuth (Bi) onto the tungsten trioxide (WO) film in a gaseous mixture containing oxygen to form a dibismuth trioxide (BiO) film, drop-casting a vanadyl acetylacetonate solution onto the BiOfilm and heating at a temperature of at least 450° C. in ambient air to convert the BiOfilm to a BiVOfilm, and photoelectrochemically coating the BiVOfilm with a cobalt-phosphate (Co-Pi) to form a modified film on the surface of the substrate. A photoanode containing the Co-Pi modified BiVO/WOheterostructure film prepared by the method, and its application in water splitting.


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