The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Jan. 28, 2021
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Takayuki Sumida, Kanagawa, JP;
Akira Shimazu, Kanagawa, JP;
Takahiro Yajima, Kanagawa, JP;
Tomona Yamaguchi, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 30/10 (2023.01); C09K 11/06 (2006.01); C09K 11/66 (2006.01); C09K 11/88 (2006.01); G09G 3/32 (2016.01); H04N 23/80 (2023.01); H10K 39/32 (2023.01); H10K 50/11 (2023.01); H10K 50/115 (2023.01); H10K 85/30 (2023.01); H10K 101/10 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 30/10 (2023.02); C09K 11/06 (2013.01); C09K 11/668 (2013.01); C09K 11/881 (2013.01); G09G 3/32 (2013.01); H04N 23/80 (2023.01); H10K 39/32 (2023.02); H10K 50/11 (2023.02); H10K 50/115 (2023.02); C09K 2211/1007 (2013.01); H10K 85/30 (2023.02); H10K 2101/10 (2023.02); H10K 2102/00 (2023.02);
Abstract
A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.