The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Jul. 31, 2017
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Huilong Zhu, Poughkeepsie, NY (US);
Guilei Wang, Beijing, CN;
Henry H. Radamson, Beijing, CN;
Yanbo Zhang, Beijing, CN;
Zhengyong Zhu, Beijing, CN;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B82Y 10/00 (2011.01); G05B 23/02 (2006.01); G06T 19/00 (2011.01); H01L 21/223 (2006.01); H01L 21/225 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/324 (2006.01); H01L 23/522 (2006.01); H04N 7/18 (2006.01); H04N 23/698 (2023.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/47 (2025.01); H10D 30/63 (2025.01); H10D 30/66 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 62/40 (2025.01); H10D 62/815 (2025.01); H10D 62/82 (2025.01); H10D 62/822 (2025.01); H10D 62/824 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 88/00 (2025.01); G06F 3/04817 (2022.01); G06F 3/0482 (2013.01); G06V 20/40 (2022.01); H01L 21/3105 (2006.01); H04N 13/111 (2018.01); H04N 13/332 (2018.01); H04N 13/366 (2018.01); H04N 13/398 (2018.01); H04N 23/90 (2023.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); B82Y 10/00 (2013.01); G05B 23/0216 (2013.01); G06T 19/006 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/2236 (2013.01); H01L 21/2252 (2013.01); H01L 21/2253 (2013.01); H01L 21/2258 (2013.01); H01L 21/3065 (2013.01); H01L 21/3083 (2013.01); H01L 21/324 (2013.01); H01L 23/5221 (2013.01); H04N 7/181 (2013.01); H04N 23/698 (2023.01); H10D 30/014 (2025.01); H10D 30/015 (2025.01); H10D 30/021 (2025.01); H10D 30/025 (2025.01); H10D 30/0291 (2025.01); H10D 30/031 (2025.01); H10D 30/43 (2025.01); H10D 30/477 (2025.01); H10D 30/63 (2025.01); H10D 30/668 (2025.01); H10D 30/6713 (2025.01); H10D 30/6728 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 30/751 (2025.01); H10D 30/797 (2025.01); H10D 62/112 (2025.01); H10D 62/116 (2025.01); H10D 62/122 (2025.01); H10D 62/151 (2025.01); H10D 62/292 (2025.01); H10D 62/371 (2025.01); H10D 62/393 (2025.01); H10D 62/40 (2025.01); H10D 62/8162 (2025.01); H10D 62/82 (2025.01); H10D 62/822 (2025.01); H10D 62/824 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 64/252 (2025.01); H10D 64/518 (2025.01); H10D 64/62 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/014 (2025.01); H10D 84/0149 (2025.01); H10D 84/016 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0177 (2025.01); H10D 84/0184 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/0195 (2025.01); H10D 84/85 (2025.01); H10D 84/857 (2025.01); H10D 88/01 (2025.01); G05B 2219/32014 (2013.01); G06F 3/04817 (2013.01); G06F 3/0482 (2013.01); G06V 20/40 (2022.01); G06V 20/44 (2022.01); G06V 2201/06 (2022.01); H01L 21/31053 (2013.01); H04N 13/111 (2018.05); H04N 13/332 (2018.05); H04N 13/366 (2018.05); H04N 13/398 (2018.05); H04N 23/90 (2023.01); H10D 62/115 (2025.01); H10D 84/0172 (2025.01);
Abstract
A semiconductor device including a substrate, a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, and a gate stack surrounding a periphery of the channel layer. The channel layer includes a semiconductor material causing an increased ON current and/or a reduced OFF current as compared to Si.