The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

May. 25, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Jar-Ming Ho, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/312 (2023.02); H10B 12/03 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

The present disclosure provides a method for preparing a memory device. The method includes forming a first bottom cell within a bottom substrate, comprising: forming a first bottom capacitor within the bottom substrate; forming a first bottom word line on the bottom substrate and extending along a first direction; and forming a first bottom channel layer surrounded by the first bottom word line. The method also includes forming a first top cell within a top substrate, comprising: forming a first top capacitor within the top substrate; forming a first top word line on the top substrate and extending along the first direction; and forming a first top channel layer surrounded by the first top word line. The method further includes forming a common bit line between the first bottom cell and the first top cell and extending along a second direction substantially perpendicular to the first direction.


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