Imaging element and imaging device

Abstract

Variation in electrostatic capacitances of control signal lines in a pixel is reduced. An imaging element includes: photoelectric conversion units arranged in a first semiconductor substrate; a charge holding unit that is disposed in the first semiconductor substrate and holds generated charges; a plurality of charge transfer units that is each disposed for one of the photoelectric conversion units and transfers the generated charges to the charge holding unit; an image signal generating circuit that is disposed in a second semiconductor substrate and generates an image signal on the basis of the held charge; a plurality of charge transfer unit signal lines that is each disposed for one of the plurality of charge transfer units and each transmits a control signal; a charge holding unit signal line that transmits a voltage corresponding to a charge held in the charge holding unit to the image signal generating circuit; and a capacitance adjustment unit that is disposed in the vicinity of at least one of the plurality of charge transfer unit signal lines and the charge holding unit signal line and adjusts an electrostatic capacitance between the charge transfer unit signal line and the charge holding unit signal line.