The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Feb. 14, 2022
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Ryo Kanda, Saitama, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor base body including: a p-type substrate; and an n-type first semiconductor layer; a first electrode; a second electrode; an isolation film; an insulation film; and a third electrode disposed over the insulation film. The first electrode is electrically connected to a first circuit Cthat is connected to a first power source Vin. The second electrode is electrically connected to a second circuit Cthat is connected to a second power source Vcc. The semiconductor base body further includes a p-type back gate region that is formed in at least a region of the semiconductor base body that faces the third electrode by way of the insulation film with a depth that allows the back gate region to reach the substrate. A dopant concentration of the back gate region falls within a range of 1×10cmto 1×10cm.