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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12244289 B1

PDFFull Text
Date of Patent:
Mar. 04, 2025

Filed:

Oct. 05, 2022

Method of manufacturing integrated circuit configured with two or more single crystal acoustic resonator devices

Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventor:

Jeffrey B. Shealy, Davidson, NC (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorneys:

Richard T. Ogawa

Ogawa P.C.

Primary Examiner:

A Dexter Tugbang

Int. Cl.
CPC ...
H03H 3/08 (2006.01); H03H 3/02 (2006.01); H03H 9/00 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/17 (2006.01); H03H 9/205 (2006.01); H03H 9/54 (2006.01); H03H 9/56 (2006.01); H03H 9/60 (2006.01); H03H 9/64 (2006.01); H10N 30/06 (2023.01); H10N 30/85 (2023.01);
U.S. Cl.
CPC ...
H03H 9/02015 (2013.01); H03H 3/02 (2013.01); H03H 3/08 (2013.01); H03H 9/0095 (2013.01); H03H 9/02574 (2013.01); H03H 9/0542 (2013.01); H03H 9/174 (2013.01); H03H 9/205 (2013.01); H03H 9/54 (2013.01); H03H 9/542 (2013.01); H03H 9/568 (2013.01); H03H 9/605 (2013.01); H03H 9/64 (2013.01); H10N 30/06 (2023.02); H10N 30/852 (2023.02); H03H 2003/023 (2013.01); H03H 2003/025 (2013.01); H03H 2003/027 (2013.01); H03H 9/175 (2013.01); Y10T 29/42 (2015.01);
Abstract

A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R) to (RN), where N is an integer greater than 1.

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