The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Dec. 13, 2021
Applicant:
Psemi Corporation, San Diego, CA (US);
Inventors:
Youngman Um, Austin, TX (US);
Xiaoling Guo, Austin, TX (US);
Assignee:
PSEMI CORPORATION, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/19 (2006.01); H03F 1/56 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H03F 1/56 (2013.01); H03F 2200/294 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract
Methods and devices to improve nonlinearity performance of low noise amplifiers (LNAs) are disclosed. The described methods and devices reduce the capacitive loading of the LNA amplifying devices on the bypass path of the LNAs when operating in the bypass mode. This is performed by decoupling the active devices from ground to put the amplifying devices in a floating state, thus minimizing the impact of the gate-source capacitances of the amplifying devices on the overall linear performance of the LNA operating in the bypass mode.