The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Jul. 16, 2021
Applicant:
Nikkiso Co., Ltd., Tokyo, JP;
Inventors:
Tetsuhiko Inazu, Hakusan Ishikawa, JP;
Noritaka Niwa, Hakusan Ishikawa, JP;
Assignee:
NIKKISO CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/32 (2013.01); H01L 2933/0058 (2013.01);
Abstract
A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; and a p-side contact electrode that includes an Rh layer in contact with an upper surface of the p-type semiconductor layer and having a thickness of 10 nm or smaller and an Al layer in contact with an upper surface of the Rh layer and having a thickness of 20 nm or larger.