The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Feb. 06, 2020
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Shinichiro Yagi, Osaka, JP;
Toshifumi Wakano, Kanagawa, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
Distance measurement accuracy is improved. An avalanche photodiode sensor according to an embodiment includes a first semiconductor substrate and a second semiconductor substrate bonded to a first surface of the first semiconductor substrate, wherein the first semiconductor substrate includes a plurality of photoelectric conversion portions arranged in a matrix and an element separation portion, the plurality of photoelectric conversion portions include a first photoelectric conversion portion, the element separation portion has a first element separation region and a second element separation region, the first photoelectric conversion portion is arranged between the first element separation region and the second element separation region, the first semiconductor substrate further includes a plurality of concave-convex portions on a second surface opposite to the first surface and between the first element separation region and the second element separation region, and the second semiconductor substrate includes a reading circuit connected to each of the photoelectric conversion portions.