The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Oct. 24, 2023
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Tetsuji Yamaguchi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H04N 25/13 (2023.01); H04N 25/63 (2023.01); H04N 25/70 (2023.01); H04N 25/76 (2023.01); H10K 19/20 (2023.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14665 (2013.01); H01L 29/16 (2013.01); H01L 29/24 (2013.01); H04N 25/134 (2023.01); H04N 25/63 (2023.01); H04N 25/70 (2023.01); H04N 25/76 (2023.01); H10K 19/20 (2023.02); H10K 39/32 (2023.02);
Abstract

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.


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